| PART |
Description |
Maker |
| V29C51400B V29C51400T |
4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| AM29LV800B-100 AM29LV800B-150 AM29LV800B-90R AM29L |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory
|
Advanced Micro Devices
|
| AM29F800T-90SEB AM29F800B-90SEB AM29F800T-70EE AM2 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
|
Advanced Micro Devices
http://
|
| AM29F040-90EI AM29F040-90EEB AM29F040-90JE AM29F04 |
4 Megabit (524/288 x 8-Bit) CMOS 5.0 Volt-only/ Sector Erase Flash Memory
|
Advanced Micro Devices
|
| TC55V4000ST-70 TC55V4000ST-85 |
524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
524,288-WORD BY 8-BIT STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| HM514800ALJ-7 HM514800ALJ-8 HM51S4800ALJ-7 HM51480 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
80ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
| M5M29FB800VP-10 M5M29FT800VP-10 M5M29FT800VP-12 M5 |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 8,388,608位（1048,576 - Word 524,288字BY16位）的CMOS 3.3只，块擦除闪
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| TC554001ATRI-70 TC554001AFI-70 TC554001AFI-70L TC5 |
524,288-WORD BY 8-BIT STATIC RAM
|
TOSHIBA
|
| TC55NEM208AFTN55 TC55NEM208AFPN70 |
524,288-WORD BY 8-BIT STATIC RAM
|
TOSHIBA
|
| HM514800CLJ-6 HM514800CLJ-7 HM514800CLJ-8 HM514800 |
524,288-word X 8-bit Dynamic Random Access Memory
|
HITACHI[Hitachi Semiconductor]
|
